(In,Ga)N∕GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2712786
Reference18 articles.
1. The Blue Laser Diode
2. Room-temperature polariton lasers based on GaN microcavities
3. Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
4. Crack-free fully epitaxial nitride microcavity with AlGaN∕GaN distributed Bragg reflectors and InGaN∕GaN quantum wells
5. Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
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1. Improved GaN Quantum Well Microcavities for Robust Room Temperature Polaritonics;physica status solidi (b);2019-03-06
2. All-dielectric GaN microcavity: Strong coupling and lasing at room temperature;Applied Physics Letters;2013-03-11
3. Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity;Applied Physics Letters;2011-05-30
4. Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror;Superlattices and Microstructures;2011-03
5. Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods;Journal of Applied Physics;2010-08-15
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