Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. III–V Nitride Semiconductors, Defects and Structural Properties;Edwards,2000
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4. Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems;Philosophical Magazine;2012-09
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