Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.3.104603/fulltext
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5. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
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