Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786435.2012.669074
Reference16 articles.
1. Nanoelectromechanical systems
2. X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates
3. Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
4. Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
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2. Elastic properties of nanolaminar Cr2AlC films and beams determined by in-situ scanning electron microscope bending tests;Thin Solid Films;2016-04
3. Optical characteristics of nanocrystalline AlxGa1−xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-05
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