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Study of metal strip insertion and its optimization in doping less TFET

  • Published:2018-10 Issue: Volume:122 Page:577-586
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Yadav Dharmendra Singh,Verma Abhishek,Sharma Dheeraj,Sharma Neeraj

Funder

Science and Engineering Research Board

Department of Science and Technology, Government of India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Impact ionization MOS (I-MOS)Part I: device and circuit simulations;Gopalakrishnan;IEEE Trans. Electron. Dev.,2005

2. I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q;Gopalakrishnan,2002

3. Work function engineering of molybdenum gate electrodes by nitrogen implantation;Ranade;Electrochem. Solid State Lett.,2001

4. An adjustable work function technology using Mo gate for CMOS devices;Lin;IEEE Electron. Device Lett.,2002

5. Impact of gate material engineering (GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation;Kumar;Microelectron. J.,2014

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