Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation-Reference-Cited by-同舟云学术

Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation

Published:2014-11 Issue:11 Volume:45 Page:1508-1514
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kumar Manoj,Haldar Subhasis,Gupta Mridula,Gupta R.S.

Funder

DRDO, Ministry of Defence, Government of India

CSIR, Government of India

Publisher

Elsevier BV

Subject

General Engineering

Reference39 articles.

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3. A compact model for undoped silicon- nanowire MOSFETs with schottky-barrier source/drain;Zhu;IEEE Trans. Electron Devices,2009

4. Pushing CMOS beyond the roadmap;Risch;Solid State Electron.,2006

5. Analytical modelling and simulation for dual metal gate stack architecture (DMGSA) cylindrical/surrounding gate MOSFET;Ghosh;JSTS,2012

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