Improved Performance of Oppositely Doped CoreShell Junctionless Nanowire FET Using Gate Material Engineering
Author:
Affiliation:
1. Delhi Technological University,Department of Electronics and Communication Engineering,Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511273/10511089/10511527.pdf?arnumber=10511527
Reference21 articles.
1. Considerations for Ultimate CMOS Scaling
2. Effect of Band-to-Band Tunneling on Junctionless Transistors
3. A depth analysis for different structures of organic thin film transistors: Modeling of performance limiting issues
4. Advancements for organic thin film transistors: Structures, materials, performance parameters, influencing factors, models, fabrication, reliability and applications
5. Nanowire transistors without junctions
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