Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Influence of annealing condition on photoluminescence characteristics of AlGaAs/GaAs multiple quantum well
3. Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer
4. Two-dimensional electron gas at a semiconductor-semiconductor interface
5. Time-resolved photoluminescence of delta-doped AlGaAs/GaAs heterostructures
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2. Effects of external fields on the nonlinear optical properties of an n-type quadruple δ-doped GaAs quantum wells;The European Physical Journal Plus;2022-06
3. Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications;IETE Journal of Research;2021-05-26
4. Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT;Journal of Electronic Materials;2021-03-30
5. Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis;Scientific Reports;2020-07-27
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