Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference18 articles.
1. Etchback-regrowth process for solar cell structures
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1. Investigation of gamma-radiation on electronic and optical properties in carbon δ-doping GaAs/AlGaAs HEMTs structures;Optik;2016-09
2. Carbon n-δ-doping effects on electronic and optical properties in GaAs/AlGaAs HEMTs;Superlattices and Microstructures;2014-08
3. Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs;The European Physical Journal Applied Physics;2014-04
4. Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures;Superlattices and Microstructures;2012-04
5. Influence of annealing condition on photoluminescence characteristics of AlGaAs/GaAs multiple quantum well;Materials Letters;2003-06
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