TCAD assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and its multi-layered gate architecture, Part II: Analog and large signal performance evaluation-Reference-Cited by-同舟云学术

TCAD assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and its multi-layered gate architecture, Part II: Analog and large signal performance evaluation

Published:2009-10 Issue:4 Volume:46 Page:645-655
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chaujar Rishu,Kaur Ravneet,Saxena Manoj,Gupta Mridula,Gupta R.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. RF-CMOS performance trends;Woerlee;IEEE Trans. Electron Devices,2001

2. RF linearity characteristics of SiGe HBTs;Niu;IEEE Trans. Microw. Theory Tech.,2001

3. Linearity and low-noise performance of SOI MOSFETs for RF applications;Adan;IEEE Trans. Electron Devices,2002

4. Linearity analysis of CMOS for RF application;Kang;IEEE Trans. Microw. Theory Tech.,2003

5. High-efficiency linear RF amplifier—A unified circuit approach to achieving compactness and low distortion;Yum;IEEE Trans. Microw. Theory Tech.,2006

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical modelling for triple hybrid gate optimization dielectric modulated junctionless gate all around SiNWFET based uricase and ChOX biosensor;Microsystem Technologies;2024-06-18

2. Linearity Performance of Double Metal Negative Capacitance Field-Effect Transistors: A Numerical Study;2022 IEEE VLSI Device Circuit and System (VLSI DCS);2022-02-26

3. Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications;The European Physical Journal Plus;2022-01

4. Linearity Analysis of MoTe2-FET based Single Transistor AND Gate Using Non-Equilibrium Green’s Function;Transactions on Electrical and Electronic Materials;2021-05-22

5. Design and Investigation of Split-Gate MoTe2-Based FET as Single Transistor AND Gate Using Nonequilibrium Green’s Function;IEEE Transactions on Electron Devices;2020-11