Design and Investigation of Split-Gate MoTe2-Based FET as Single Transistor AND Gate Using Nonequilibrium Green’s Function-Reference-Cited by-同舟云学术

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Design and Investigation of Split-Gate MoTe2-Based FET as Single Transistor AND Gate Using Nonequilibrium Green’s Function

Published:2020-11 Issue:11 Volume:67 Page:5221-5228
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Prateek,Gupta Maneesha^ORCID,Singh Kunwar,Kumar Naveen^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9237191/09226431.pdf?arnumber=9226431

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of SiGeC/SiGe/SiC–Si heterojunction based vertical nanowire FET using non equilibrium Green's function;Micro and Nanostructures;2024-05

2. Design and analysis of Z shaped InGa0.5As0.5/Si tunnel FET using non-equilibrium Green’s function model for hydrogen gas sensing application;Micro and Nanostructures;2023-10

3. Performance Analysis of MoTe2/MoSe2 and MoTe2/WSe2 Heterostructure Double-Gate MOSFET;Journal of Electronic Materials;2023-09-10

4. Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects;physica status solidi (a);2023-04-04

5. Expanding the Set of Three-Input Logic Functions in Inverted T-Shaped TFETs;Micromachines;2023-02-14

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