RF linearity characteristics of SiGe HBTs-Reference-Cited by-同舟云学术

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RF linearity characteristics of SiGe HBTs

Published:2001 Issue:9 Volume:49 Page:1558-1565
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Guofu Niu ,Qingqing Liang ,Cressler J.D.,Webster C.S.,Harame D.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/20400/00942567.pdf?arnumber=942567

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process-induced stress tuning to improve linearity performance in AlGaN/GaN HEMTs with SiNx passivation;Physica Scripta;2024-09-06

2. RF, harmonic distortion and linearity analysis of core-shell junctionless-FET using NQS small signal model;Physica Scripta;2024-07-09

3. RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique;Micromachines;2023-11-03

4. Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications;Physica Scripta;2023-09-14

5. Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

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