Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies
Author:
Affiliation:
1. Auburn University,Alabama Micro and Nanoelectronics Science and Technology Center,Electrical and Computer Engineering Department,Auburn,AL,USA,36849
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051757.pdf?arnumber=10051757
Reference21 articles.
1. Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications
2. Configuration Dependence of SiGe HBT Linearity Characteristics
3. X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity
4. Improved synthesis of gain-boosted regulated-cascode CMOS stages using symbolic analysis and gm/ID methodology
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