Author:
Niu G.,Zhang Anni,Li Yiao,Zhang Huaiyuan,Scholten Andries,Willemsen Marnix,Pijper Ralf,Tiemeijer L.F.
Abstract
This paper presents an X-parameter based approach to characterizing and compact modeling of SiGe HBT linearity. Removing RF source distortion using X-parameter measurements significantly increases measurement accuracy in highly linear common-base SiGe HBTs. X-parameters simulated using Mextram 505.0 are compared with measurements for the first time. To a large extent, our model accurately captures nearly all the X-parameters for a large range of biasing emitter current and collector-base voltage.
Publisher
The Electrochemical Society
Cited by
2 articles.
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1. Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
2. RF Linearity of SiGe HBT: Physics, Compact Modeling Using Mextram 505 and X-Parameter Based Measurements;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08