Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT

Author:

Bhattacharya Monika,Jogi Jyotika,Gupta R.S.,Gupta Mridula

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472GHz cutoff frequency;Shinohara;Jpn. J. Appl. Phys.,2002

2. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz;Yamashita;IEEE Electron Device Lett.,2002

3. 547-GHz fT In0.7Ga0.3As-In0.52Al0.48As HEMTs with reduced source and drain resistance;Shinohara;IEEE Electron Device Lett.,2004

4. Sub 50 nm InP HEMT device with Fmax greater than 1 THz;Lai;IEEE Int. Electron Devices Meet.,2007

5. Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors;Tsuyoshi;Appl. Phys. Express,2017

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