A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. GaN Transistors for Efficient Power Conversion;Lidow,2014
2. SiC and GaN devices – wide bandgap is not all the same;Kaminski;Circ., Dev. Syst., IET,2014
3. Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures;Yu;J. Appl. Phys.,2001
4. Fundamentals of Power Semiconductor Devices;Baliga,2010
5. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate;Karmalkar;IEEE Trans. Electron Dev.,2001
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1. Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier;Electronics;2022-06-21
2. Effect of material composition on noise performance of sub-micron high electron mobility transistor;Microsystem Technologies;2020-01-04
3. Fabrication and comparative study of vertically-grown and horizontally-dispersed fully nanowire-based photodetectors;Applied Surface Science;2015-12
4. Stopped depletion region extension in an AlGaN/GaN-HEMT: A new technique for improving high-frequency performance;Journal of the Korean Physical Society;2015-08
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