Effect of material composition on noise performance of sub-micron high electron mobility transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s00542-019-04742-3.pdf
Reference29 articles.
1. De T, Mohapatra M, Panda AK (2016) DC and RF performance analysis of AlGaN/GaN based HEMT. In: 2nd International conference on communication control and intelligent systems
2. Ebrahimi B, Asad M (2015) A normally-off fully AlGaN HEMT with high breakdown voltage and figure of merit for power switch applications. Superlattices Microstruct 83:819–826
3. Guo L, Yang X, Hu A, Feng Z, Lv Y, Zhang J, Cheng J, Tang N, Wang X, Ge W, Shen B (2016) Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier. Sci Rep 6:37415
4. Kirtania SG, Aadit MNA, Alam MK (2017) 3D simulation of impact ionization induced kink effect in AlGaN/GaN HEMTs: a novel split channel design with asymmetric double gate for kink suppression. In: 3rd International conference on electrical information and communication technology
5. Kumar R, Arya SK, Ahlawat A (2014) Microwave analysis for two-dimensional C-V and noise model of AlGaN/GaN MODFET. Adv Mater Sci Eng 2014:197937
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