Author:
Goswami Rupam,Bhowmick Brinda,Baishya Srimanta
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs;Sarangi;Superlattices Microstruct.,2013
2. Performance comparison between p–i–n tunneling transistors and conventional MOSFETs;Koswatta;IEEE Trans. Electron Devices,2009
3. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60mV/dec;Choi;IEEE Electron Device Lett.,2007
4. C. Le Royer, F. Mayer, Exhaustive experimental study of tunnel field effect transistors (TFETs): from materials to architecture, in: Proc. 10th Int. Conf. Ultim. Integr. Silicon, ULIS 2009 (2009), pp. 53–56, doi: 10.1109/ULIS.2009.4897537.
5. A new three-terminal tunnel device;Banerjee;IEEE Electron Device Lett.,1987
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