Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture-Reference-Cited by-同舟云学术

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Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

Published:2009-03 Issue: Volume: Page:
ISSN:
Container-title:2009 10th International Conference on Ultimate Integration of Silicon
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Author:

Le Royer C.,Mayer F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4832838/4897524/04897537.pdf?arnumber=4897537

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers;Physica Scripta;2024-07-04

2. Theoretical and simulation-based assessment of electrically doped junctionless TFET with metal-strip and hetero-material considering interface trap charges;Microelectronics Reliability;2024-06

3. A Charge Plasma Based Dual Buried Gates Power MOSFET with Improved Figure of Merits;Silicon;2024-05-31

4. Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET;Journal of Computational Electronics;2024-03-19

5. Advanced Tunnel Field Effect Transistors;Handbook of Emerging Materials for Semiconductor Industry;2024

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