Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/4832838/4897524/04897537.pdf?arnumber=4897537
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation;Physica Scripta;2023-08-09
2. Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation;Semiconductor Science and Technology;2022-12-09
3. Analysis and Design of Novel Doping Free Silicon Nanotube TFET with High-density Meshing Using ML for Sub Nanometre Technology Nodes;Silicon;2022-04-06
4. Mg2Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications;Journal of Materials Science: Materials in Electronics;2022-02-15
5. Comparative Analysis of a Dopingless Tunnel FET and MOSFET-Based Current Mirror;Lecture Notes in Electrical Engineering;2021-12-14
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