Theoretical and simulation-based assessment of electrically doped junctionless TFET with metal-strip and hetero-material considering interface trap charges-Reference-Cited by-同舟云学术

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Theoretical and simulation-based assessment of electrically doped junctionless TFET with metal-strip and hetero-material considering interface trap charges

Published:2024-06 Issue: Volume:157 Page:115393
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chandan Bandi Venkata^ORCID,Nigam Kaushal Kumar

Publisher

Elsevier BV

Reference36 articles.

1. Performance comparison between p-i-n tunneling transistors and conventional MOSFETs;Koswatta;IEEE Trans. Electron Devices,2007

2. Precise analytical model for short channel Cylindrical Gate (CylG) GateALL-Around (GAA) MOSFET;Sharma;Solid State Electron.,2013

3. Scaling the Si MOSFET: from bulk to SOI to bulk;Yan;IEEE Trans. Electron Devices,1992

4. Tunneling field effect transistor (TFETs) with subthreshold swing (SS) less than 60 mV/Dec;Choi;IEEE Electron Device Lett.,2007

5. Double gate tunnel FET with high gate dielectric;Boucart;IEEE Trans. Electron Devices,2007

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