Dark properties and transient current response of Si0.95Ge0.05 n+p devices-Reference-Cited by-同舟云学术

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Dark properties and transient current response of Si0.95Ge0.05 n+p devices

Published:2004-02 Issue:1-2 Volume:518 Page:373-375
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Ruzin Arie,Marunko S.,Abrosimov N.V.,Riemann H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. High efficiency CsI(Tl)/HgI/sub 2/ gamma ray spectrometers

2. Cadmium telluride and mercuric iodide gamma radiation detectors

3. The Atomic Nucleus;Evans,1955

4. Near-band-gap photoluminescence of Si-Ge alloys

5. Current mechanisms in silicon PIN structures processed with various technologies

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions;Technical Physics Letters;2010-02

2. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers;Inorganic Materials;2008-07

3. Study of bulk grown silicon–germanium radiation detectors;Journal of Applied Physics;2004-05

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