Current mechanisms in silicon PIN structures processed with various technologies
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Study of the long term stability of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors fabricated by various thermal oxidation processes
2. Defect evolution in irradiated silicon detector material
3. Comparison of radiation damage in silicon induced by proton and neutron irradiation
4. Recent results from the RD-48 (ROSE) Collaboration
5. Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
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2. Fabrication of silicon PIN diode with SiGe junction for soft x-ray detector using low-temperature technology;Radiation Physics and Chemistry;2022-03
3. Activation energy values from the temperature dependence of silicon PN junction reverse current and its origin;physica status solidi (a);2010-01-05
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5. Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal -ray Dosimeter;Journal of the Korean Physical Society;2007-07-14
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