Fabrication of a Silicon Electron Multiplier sensor using metal assisted chemical etching and its characterisation-Reference-Cited by-同舟云学术

Fabrication of a Silicon Electron Multiplier sensor using metal assisted chemical etching and its characterisation

Published:2024-03 Issue: Volume:1060 Page:169046
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Halvorsen Marius Mæhlum^ORCID,Coco Victor^ORCID,Collins Paula^ORCID,Sandaker Heidi,Romano Lucia^ORCID

Funder

CERN

European Commission

Horizon 2020 Framework Programme

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference27 articles.

1. E.D.R.R.P. Group, The 2021 ECFA Detector Research and Development Roadmap, Tech. rep., Geneva, 2020, http://dx.doi.org/10.17181/CERN.XDPL.W2EX, URL https://cds.cern.ch/record/2784893.

2. Charge collection studies on custom silicon detectors irradiated up to 1.6E17neqcm−2;Kramberger;J. Instrum.,2013

3. On the timing performance of thin planar silicon sensors;Akchurin;Nucl. Instrum. Methods Phys. Res. A,2017

4. Test-beam results of a silicon pixel detector with Time-over-Threshold read-out having ultra-precise time resolution;Rinella;J. Instrum.,2015

5. 3D — A proposed new architecture for solid-state radiation detectors;Parker;Nucl. Instrum. Methods Phys. Res. A,1997

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