Study of bulk grown silicon–germanium radiation detectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1688462
Reference16 articles.
1. High efficiency CsI(Tl)/HgI/sub 2/ gamma ray spectrometers
2. Cadmium telluride and mercuric iodide gamma radiation detectors
3. Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal–melt interface position for precise control of the growth temperature
4. Optimization of thermal conditions during crystal growth in a multi-zone resistance furnace
5. Surface and bulk point defect generation in Czochralski and float zone type silicon wafers
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1. Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates;ECS Transactions;2013-03-15
2. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions;Technical Physics Letters;2010-02
3. Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation;Physica B: Condensed Matter;2009-12
4. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers;Inorganic Materials;2008-07
5. Characterization of radiation-related damage in bulk-grown silicon–germanium detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-06
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