Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
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2. Advantages and limitations of silicon-on-insulator technology in radiation environments
3. Handbook of Radiation Effects;Adams,1993
4. Trends in the total-dose response of modern bipolar transistors
5. Hydrogen-related reliability issues for advanced microelectronics
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