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Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20MeV Br ions

  • Published:2014-01 Issue: Volume:735 Page:462-465
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Liu ChaomingORCID,Li Xingji,Yang Jianqun,Bollmann Joachim

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Special Foundation of China Postdoctoral Science

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of radiation resistance by hydrogen soaking and aging treatment in transistors;Microelectronics Reliability;2019-09

2. Evolution of radiation defects in NPN bipolar junction transistors irradiated by 3 MeV protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-04

3. Hydrogen soaking irradiation acceleration method: application to and damage mechanism analysis on 3DG111 transistors;Acta Physica Sinica;2019

4. An Analysis of 30 MeV Proton Irradiation and Annealing Effects on Silicon NPN Power Transistors;Iranian Journal of Science and Technology, Transactions A: Science;2018-06-20

5. Radiation damage and defects in NPN bipolar junction transistors irradiated by silicon ions with various energies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10
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