Author:
Hasan Md Sakib,Rahman Touhidur,Islam Syed K.,Blalock Benjamin B.
Reference17 articles.
1. The Multiple-Gate MOS-JFET Transistor;Blalock;Int. J. High. Speed Electron. Syst.,2002
2. S. Cristoloveanu, B. Blalock, F. Allibert, B. M. Dufrene, and M. M. Mojarradi, “The Four-Gate Transistor,” Proceedings of the 2002 European Solid-State Device Research Conference, pp. 323-326, Firenze, Italy, September 2002.
3. An SOI voltage-controlled bipolar-MOS device;Colinge;IEEE Trans. Electron Devices,1987
4. Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics;Manghisoni;Nucl. Instrum. Methods Phys. Res. Sect. A: Accel. Spectrometers, Detect. Assoc. Equip.,2004
5. K. Akarvardar, S. Chen, B.J. Blalock, S. Cristoloveanu, P. Gentil, M. Mojarradi, A Novel Four-Quadrant Analog Multiplier Using SOI Four-Gate Transistors (G4-FETs), Proceedings of ESSCIRC, Grenoble, France, 2005.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献