Author:
Wang Zujun,Xue Yuanyuan,Chen Wei,Ning Hao,Xu Rui,Guo Xiaoqiang,Sheng Jiangkun,Yao Zhibin,He Baoping,Ma Wuying,Dong Guantao
Funder
National Science Foundation of China
Chinese Academy of Sciences
Innovation Foundation of Radiation Application, China
Foundation of State Key Laboratory of China
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. Degradation analysis of the pinned photodiode CMOS image sensors induced by energetic proton radiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-01
2. 不同偏置条件下CMOS图像传感器质子辐照损伤效应的实验与分析;Acta Optica Sinica;2023
3. Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-03
4. Analysis of CSNS neutron-induced displacement damage effects on top illumination planar InGaAs p-i-n photodetectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-10
5. Double-bunch unfolding methods for the Back-n white neutron source at CSNS;Journal of Instrumentation;2020-03-25