Degradation analysis of the pinned photodiode CMOS image sensors induced by energetic proton radiation-Reference-Cited by-同舟云学术

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Degradation analysis of the pinned photodiode CMOS image sensors induced by energetic proton radiation

Published:2024-01 Issue: Volume:1058 Page:168784
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Wang Zujun,Xue Yuanyuan,Wang Zhongming,Chen Wei,Yin Liyuan,Wang Xinghong,Nie Xu,Lai Shankun,Huang Gang,Wang Maocheng,Ding Lili,He Baoping,Ma Wuying,Gou Shilong

Funder

National Key Laboratory Foundation of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Total dose and displacement damage effects in a radiation-hardened CMOS APS;Bogaerts;IEEE Trans. Electron. Dev.,2003

2. Fixed pattern noise and temporal noise degradation induced by radiation effects in pinned photodiode CMOS image sensors;Wang;IEEE Trans. Nucl. Sci.,2018

3. Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors;Wang;Sci. China Inf. Sci.,2019

4. Single particle transient response and displacement damage in CMOS Image Sensors induced by high energy neutrons at Back-n in CSNS facility;Wang;Nucl. Instrum. Methods,2019

5. Transient response in PPD CMOS image sensors irradiated by gamma rays: variation of dose rates and integration times;Wang;IEEE Trans. Nucl. Sci.,2019

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