Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS-Reference-Cited by-同舟云学术

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Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS

Published:2022-03 Issue: Volume:1026 Page:166154
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Wang Zujun,Xue Yuanyuan,Chen Wei,Guo Xiaoqiang,Yang Xie,Jia Tongxuan,Nie Xu,Lai Shankun,Huang Gang,Yao Zhibin,He Baoping,Sheng Jiangkun,Ma Wuying,Dong Guantao

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Studies of back-streaming white neutrons at CSNS;Jing;Nucl. Instr. and Meth. A,2010

2. Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS image technology;Goiffon;IEEE Trans. Electron Devices,2009

3. Radiation effects in pinned photodiode CMOS image sensors: pixel performance degradation due to total ionizing dose;Goiffon;IEEE Trans. Nucl. Sci.,2012

4. Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors;Goiffon;IEEE Trans. Nucl. Sci,2014

5. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology;Virmontois;IEEE Trans. Nucl. Sci.,2010

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