Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs-Reference-Cited by-同舟云学术

Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs

Published:2019-04 Issue: Volume:924 Page:404-408
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Kurachi Ikuo,Kobayashi Kazuo,Okihara Masao,Kasai Hiroki,Hatsui Takaki,Hara Kazuhiko,Miyoshi Toshinobu,Arai Yasuo

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

X-ray Free Electron Laser Priority Strategy Program within MEXT

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Radiation Imaging Detectors using SOI Technology;Arai,2017

2. Y. Arai, et al., Monolithic pixel detector in a 0.15 mm soi technology, in: Proc. IEEE Nucl. Sci. Symp. Conf. Rec. Vol. 3, 2006, p. 1440.

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