Analysis of Effective Gate Length Modulation by X-Ray Irradiation for Fully Depleted SOI p-MOSFETs-Reference-Cited by-同舟云学术

Analysis of Effective Gate Length Modulation by X-Ray Irradiation for Fully Depleted SOI p-MOSFETs

Published:2015-08 Issue:8 Volume:62 Page:2371-2376
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kurachi Ikuo,Kobayashi Kazuo,Okihara Masao,Kasai Hiroki,Hatsui Takaki,Hara Kazuhiko,Miyoshi Toshinobu,Arai Yasuo

Funder

Grants-in-Aid for Scientific Research (KAKENHI) through the KEK Detector Technology Project within the Ministry of Education, Culture, Sports, Science and Technology

X-Ray Free Electron Laser Priority Strategy Program through the Ministry of Education, Culture, Sports, Science and Technology

KAKENHI through the Japan Society for the Promotion of Science

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7163647/07138596.pdf?arnumber=7138596

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