Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI Transistors-Reference-Cited by-同舟云学术

Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI Transistors

Published:2022-12 Issue:12 Volume:69 Page:2314-2323
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Zhang Ruiqin¹^ORCID,Zheng Qiwen²^ORCID,Cui Jiangwei²^ORCID,Li Yudong²^ORCID,Yu Xuefeng²,Lu Wu²,Guo Qi²^ORCID

Affiliation:

1. School of Microelectronics, University of Chinese Academy of Sciences, Beijing, China

2. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China

Funder

Natural Science Foundation of Xinjiang Uygur Autonomous Region

National Natural Science Foundation of China

Youth Innovation Promotion Association CAS

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10002162/09938964.pdf?arnumber=9938964

Reference32 articles.

1. Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

2. New insights into fully-depleted SOI transistor response after total-dose irradiation

3. New insights on VT stability of HK/MG stacks with scaling in 30 nm FDSOI technology;brunet;Symp VLSI Technol Dig Tech Papers,2010

4. Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

5. Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors

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1. Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si);IEEE Transactions on Electron Devices;2024-06

2. Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells;IEEE Transactions on Nuclear Science;2024-03