Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions-Reference-Cited by-同舟云学术

Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions

Published:2000-08 Issue:4 Volume:3 Page:285-290
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Whelan S,Armour D.G,Van den Berg J.A,Goldberg R.D,Zhang S,Bailey P,Noakes T.C.Q

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

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3. Damage and defects from low-energy implants in Si

4. Amorphization of silicon by elevated temperature ion irradiation

5. A Critical Regime for Amorphization of Ion Implanted Silicon

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