Enhanced Dopant Diffusion Effects in 4H Silicon Carbide-Reference-Cited by-同舟云学术

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Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Published:2002-04 Issue: Volume:389-393 Page:855-858
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Phelps G.J.¹,Wright Nicolas G.²,Chester E.G.¹,Johnson C. Mark³,O'Neill Anthony G.²,Ortolland S.¹,Horsfall Alton B.²,Vassilevski Konstantin²,Gwilliam Russell⁴

Affiliation:

1. University of Newcastle

2. Newcastle University

3. University of Nottingham

4. University of Surrey

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.855.pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation;Solid-State Electronics;2005-03

2. Field enhanced diffusion of nitrogen and boron in 4H–silicon carbide;Journal of Applied Physics;2003-10

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