Field enhanced diffusion of nitrogen and boron in 4H–silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1604956
Reference32 articles.
1. Diffusion of nitrogen into silicon carbide single crystals doped with aluminum
2. Transient enhanced diffusion of implanted boron in 4H-silicon carbide
3. Nitrogen Incorporation in SiC
4. Surface Composition of 4H-SiC as a Function of Temperature
5. Characteristics of n-p Junction Diodes made by Double-Implantations into SiC
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1. Defects related to electrical doping of 4H-SiC by ion implantation;Materials Science in Semiconductor Processing;2018-05
2. Enhanced electrical resistivity in SiC–BN composites with highly-active BN nanoparticles synthesized via chemical route;Journal of the European Ceramic Society;2015-05
3. Microstructure, Thermal Conductivity, and Electrical Properties of In Situ Pressureless Densified SiC-BN Composites;Journal of the American Ceramic Society;2014-12-19
4. Calculation of the internal electric field within doped semiconductors;Semiconductor Science and Technology;2012-01-31
5. Effects of laser scans on the diffusion depth and diffusivity of gallium in n-type 4H–SiC during laser doping;Materials Science and Engineering: B;2011-05
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