Author:
Velichko O.I.,Dobrushkin V.A.,Pakula L.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference24 articles.
1. Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions
2. Transient enhanced diffusion of arsenic in silicon
3. Kinetics of Phosphorus Predeposition in Silicon Using POCl3
4. G. Masetti, D. Nobili, S. Solmi, in: H. Huff, E. Sirtl (Eds.), Semiconductor Silicon, Electrochemical Society, Pennington, New Jersey, 1977, pp. 648–657.
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献