Complementary use of atom probe tomography (APT) and differential hall effect metrology (DHEM) for activation loss in phosphorus-implanted polycrystalline silicon-Reference-Cited by-同舟云学术

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Complementary use of atom probe tomography (APT) and differential hall effect metrology (DHEM) for activation loss in phosphorus-implanted polycrystalline silicon

Published:2024-03 Issue: Volume:241 Page:115877
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Lin Kun-Lin^ORCID,Lee Fa-Yan,Chen Yi-Meng,Tseng Yu-Jen^ORCID,Yen Hung-Wei^ORCID

Funder

National Science and Technology Council

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference26 articles.

1. Polycrystalline silicon thin film transistors;Semicond;Sci. Technol.,1995

2. Thin film MOSFET's fabricated in laser-annealed polycrystalline silicon;Lee;Appl. Phys. Lett.,1979

3. Junctionless nanosheet (3nm) Poly-Si TFT: electrical characteristics and superior positive gate bias stress reliability;Lin;IEEE Electron Device Lett.,2017

4. Dopant activation and Hall mobility in B- and As implanted polysilicon films after rapid or conventional thermal annealing;Jeanjean;Sci. Technol.,1991

5. Electrical and piezoresistive characterization of boron-doped LPCVD polycrystalline silicon under rapid thermal annealing;Berre;Sens. Actuator A Phys.,1996

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