Electrical properties of the silicon oxide/Si structure formed with perchloric acid at 203°C
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference26 articles.
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1. Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient;Journal of Materials Science: Materials in Electronics;2018-06-05
2. Effect of oxidation temperature on physical and electrical properties of ZrO2 thin-film gate oxide on Ge substrate;Thin Solid Films;2017-11
3. Nitric Acid Oxidation of 3C-SiC to Fabricate MOS Diodes with a Low Leakage Current Density;Journal of The Electrochemical Society;2008
4. Low interface state density of SiC-based metal–oxide–semiconductor structure formed with perchloric acid at 203 °C;Applied Physics Letters;2002-07-08
5. SiC/SiO2Structure Formed at ∼ 200°C by Heat Treatment at 950°C Having Excellent Electrical Characteristics;Japanese Journal of Applied Physics;2002-04-30
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