Low interface state density of SiC-based metal–oxide–semiconductor structure formed with perchloric acid at 203 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1492023
Reference19 articles.
1. Advances in SiC MOS Technology
2. Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface
3. Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's
4. Low‐frequency, high‐temperature conductance and capacitance measurements on metal‐oxide‐silicon carbide capacitors
5. Effects of oxidation conditions on electrical properties of SiC‐SiO2interfaces
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