Improved transport properties of InxGa1−xP/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. Advantages of Al-free GalnP/lnGaAs PHEMTs for power applications
2. High-power V-band Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As pseudomorphic HEMT grown by gas source molecular beam epitaxy
3. Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell
4. Large Schottky barriers formed on epitaxial InGaP grown on GaAs
5. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metal-organic VPE growth of electron mobility enhanced GaInP/GaInAs pseudomorphic two-dimensional FET structure;Journal of Crystal Growth;2000-12
2. Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures;Journal of Crystal Growth;2000-06
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