Advantages of Al-free GalnP/lnGaAs PHEMTs for power applications-Reference-Cited by-同舟云学术

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Advantages of Al-free GalnP/lnGaAs PHEMTs for power applications

Published:1998 Issue:6 Volume:34 Page:590
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Chertouk M.,Bürkner S.,Bachem K.,Pletschen W.,Kraus S.,Braunstein J.,Tränkle G.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19980436?crawler=true&mimetype=application/pdf

Reference3 articles.

1. Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications

2. GaInP/GaInAs/GaAs structures for high performance MODFETs. Design, growth procedure, Hall data and device properties

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005

2. Off-State Breakdown of GaAs PHEMTs: Review and New Data;IEEE Transactions on Device and Materials Reliability;2004-03

3. Anisotropic and selective grain growth during ohmic contact formation;Journal of Electronic Materials;2002-12

4. InGaAs/InGaP HEMTs: technological optimization and analytical modelling;Vacuum;2001-05-14

5. Improved transport properties of InxGa1−xP/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures;Solid State Communications;1999-11

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