Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. High-speed InGaP/GaAs heterojunction bipolar transistors with buried SiO2 using WSi as the base electrode
2. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
3. Highly carbon‐dopedp‐type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas‐source molecular beam epitaxy
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