Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations-Reference-Cited by-同舟云学术

Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations

Published:2012-02 Issue:1 Volume:44 Page:12-20
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Alahyarizadeh Gh.,Aghajani H.,Mahmodi H.,Rahmani R.,Hassan Z.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference60 articles.

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3. Design of a 364nm electrically pumped multi-quantum well continuous wave nitride vertical cavity surface emitting laser;Luke;Materials Research Society,2003

4. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime;Zhao;IET Optoelectron,2009

5. Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes;Kojima;Physica Status Solidi (c),2008

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