Effects of Cavity Parameters on the Output Characteristics of InGaN/GaN Superluminescent Light Emitting Diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Mathematics,General Earth and Planetary Sciences,General Agricultural and Biological Sciences,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s40995-021-01095-3.pdf
Reference37 articles.
1. Absalan H, Golzan MM, Moslehi Milani N (2020) Influence of internal electric field on the spectral characteristics of blue GaN-based superluminescent light-emitting diodes. Iran J Sci Technol Trans Sci 44:1259
2. Alahyarizadeh Gh, Aghajani H, Mahmodi H, Rahmani R, Hassan Z (2012) Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations. Opt Laser Technol 44:12
3. Bulashevich KA, Karpov SY (2008) Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes. Phys Stat Solidi c 5:2066
4. Chuang SL (2009) Physics of photonic devices, 2nd edn. Wiley, New Jersey
5. Dutta NK, Nelson RJ, Wright PD, Besomi P, Wilson RB (1983) Optical properties of a 1.3-μm InGaAsP superluminescent diode. IEEE Trans Electron Dev 30:360
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