Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge-Reference-Cited by-同舟云学术

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Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

Published:1974-10 Issue:8 Volume:15 Page:1403-1408
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Skolnick M.S.,Eaves L.,Stradling R.A.,Portal J.C.,Askenazy S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference17 articles.

1. High resolution photoconductivity studies of residual shallow donors in ultrapure Ge

2. Chemical Impurities and Lattice Defects in High-Purity Germanium

3. HALLER E.E. and HANSEN W.L. (to be published).

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2. Calibration of the photoluminescence technique for measuring concentrations of shallow dopants in Ge;Journal of Applied Physics;2012-11-15

3. New Results on the Bound Exciton Luminescence in Germanium;Solid State Phenomena;2011-08

4. Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction;Journal of Physics: Condensed Matter;2009-07-24

5. Donor and Donor-Like EM Spectra;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009

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