High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source-Reference-Cited by-同舟云学术

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High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source

Published:2019-03-04 Issue:9 Volume:114 Page:092103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wienold M.¹²^ORCID,Pavlov S. G.¹,Abrosimov N. V.³,Hübers H.-W.¹²^ORCID

Affiliation:

1. German Aerospace Center (DLR), Institute of Optical Sensor Systems, Rutherfordstr. 2, 12489 Berlin, Germany

2. Humboldt-Universität zu Berlin, Department of Physics, Newtonstr. 15, 12489 Berlin, Germany

3. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5081030

Reference22 articles.

1. Optical Investigations of Impurity Levels in Silicon

2. Excitation spectra of group III impurities in germanium

3. Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductors

4. Stimulated Emission from Donor Transitions in Silicon

5. Impurity Absorption Spectroscopy inSi28: The Importance of Inhomogeneous Isotope Broadening

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Combination of ultrafast time-resolved spectroscopy techniques for the analysis of electron dynamics of heliumlike impurity centers in silicon;Physical Review B;2022-11-21

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