Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=33/a=335801/pdf
Reference29 articles.
1. Excitation spectra of group III impurities in germanium
2. Transverse Zeeman Effect of the Excitation Spectra of Boron and Thallium Impurities in Germanium
3. High resolution fourier transform spectroscopy of shallow acceptors in ultra-pure germanium
4. Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge
5. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory
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