Transverse Zeeman Effect of the Excitation Spectra of Boron and Thallium Impurities in Germanium-Reference-Cited by-同舟云学术

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Transverse Zeeman Effect of the Excitation Spectra of Boron and Thallium Impurities in Germanium

Published:1973-07-15 Issue:2 Volume:8 Page:870-893
ISSN:0556-2805
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Soepangkat H. P.,Fisher P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.8.870/fulltext

Reference45 articles.

1. An Optical Determination of the Ground-State Splittings of Group V Impurities in Germanium

2. Effect of Uniaxial Stress on the Excitation Spectra of Donors in Silicon

3. Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and Germanium

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1. Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction;Journal of Physics: Condensed Matter;2009-07-24

2. Effects of Perturbations;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009

3. EM Acceptor Spectra;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009

4. Terahertz Zeeman spectroscopy of boron in germanium to high magnetic fields;Physical Review B;2008-03-26

5. Giant Anisotropy of Zeeman Splitting of Quantum Confined Acceptors inSi/Ge;Physical Review Letters;2006-03-01

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