Affiliation:
1. Technische Universität Dresden
2. Leibniz-Institut für Kristallzüchtung
3. Institut für Kristallzüchtung im Forschungsverbund Berlin e.V.
4. Ghent University
Abstract
Photoluminescence from excitons bound to shallow donors or acceptors was studied in Al-, As-, B-, Ga- and P-doped Ge. Excitons bound to Al and B acceptors were identified for the first time. The dissociation energy of the excitons satisfies Haynes rule and changes with a factor of 0.1 linearly with the ionization energy of the dopants.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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